UIUC - Professor Joe Greene

这几天SVC正在举行50th Annual SVC Technical Conference，网上看到一直很葱白的UIUC - Professor Joe Greene做大会特别报告：Design of Self-organized Nanostructures in Hard Ceramic Films with Enhanced Properties and Controlled Interfacial Structure。不由自主的想表述下心中葱白之情，但却觉得暂时了解/理解得不够深刻，不敢造次（属于盲目葱白类型，呵呵），具体待下次补充。

Up to May 2007
Results found: 220
Sum of the Times Cited :4,799
Average Citations per Item : 21.81
h-index :39

Joe Greene is the D.B. Willett Professor of Materials Science at the University of Illinois and the Tage Erlander Professor of Materials Physics at Linköping University, Sweden. The focus of his research has been the development of an atomic-level order to controllably manipulate microchemistry, microstructure, and, hence, physical properties. His work has involved film growth by all forms of sputter deposition; solid and gas-source MBE, UHV-CVD, MOCVD, and ALE. Joe has published more than 500 papers and review articles, 22 book chapters, and he has co-edited four books in the general areas of crystal growth, thin-film physics, and surface science. In particular, he has used energetic accelerated condensing species and UV photochemistry for probing as well as stimulating surface reactions that do not proceed thermally. He is currently Editor-in-Chief of Thin Solid Films and past Editor of CRC Critical Reviews in Solid State and Materials Sciences. He is active in AVS where he has served as a Trustee, as Chair of the Thin Film Division, twice as a member of the Board of Directors, as President of the Society in 1989, and currently serves on the Advanced Surface Engineering Division (ASED) Executive Committee. His major awards include the John A. Thornton Memorial Award (1991) from AVS for “outstanding research in thin films”; the Tage Erlander Award (1991) from the Swedish Natural Science Research Council for “contributions to the physics and chemistry of thin films”; Senior University of Illinois Scholar (1991) for “distinction as a member of the faculty”; an Honorary Doctor of Science Degree (1992) from Linköping University; Fellow of AVS (1993); the Technical Excellence Award from the Semiconductor Research Corporation (SRC) for “outstanding research contributions in the development of low-energy accelerated-ion doping during MBE Si and Si1-xGex film growth” (1994); the 1996 DOE Award for Sustained Outstanding Research, the 1998 David Adler Award in Materials Physics from the American Physical Society for “outstanding research and lecturing on the physics and chemistry of thin films”; Fellow of the American Physical Society (1998); the 1998 Aristotle Award from SRC for “career achievement in outstanding graduate student teaching in its broadest sense”; the D.B. Willett Professor of Engineering; the 1999 MRS David Turnbull Award for “contributions to the use of non-thermal methods in the growth of thin films and the engineering of their phase, composition, and microstructure and for excellence in teaching and writing”; the 2001 International Scientist of the Year for “contributions to thin film science;” and election to the U.S. National Academy of Engineering in 2003 for “pioneering studies in the synthesis and characterization of epitaxial and highly ordered polycrystalline materials.”
1. POWELL RC, LEE NE, KIM YW, et al.HETEROEPITAXIAL WURTZITE AND ZINCBLENDE STRUCTURE GAN GROWN BY REACTIVE-ION MOLECULAR-BEAM EPITAXY - GROWTH-KINETICS, MICROSTRUCTURE, AND PROPERTIES JOURNAL OF APPLIED PHYSICS 73 (1): 189-204 JAN 1 1993 Times Cited: 262
2. GREENE JE, SUNDGREN JE, HULTMAN L, et al.DEVELOPMENT OF PREFERRED ORIENTATION IN POLYCRYSTALLINE TIN LAYERS GROWN BY ULTRAHIGH-VACUUM REACTIVE MAGNETRON SPUTTERING APPLIED PHYSICS LETTERS 67 (20): 2928-2930 NOV 13 1995 Times Cited: 123
3. Zheng WT, Sjostrom H, Ivanov I, et al.Reactive magnetron sputter deposited CNx: Effects of N-2 pressure and growth temperature on film composition, bonding, and microstructure JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 14 (5): 2696-2701 SEP-OCT 1996 Times Cited: 117
4. VANNOSTRAND JE, CHEY SJ, HASAN MA, et al.SURFACE-MORPHOLOGY DURING MULTILAYER EPITAXIAL-GROWTH OF GE(001) PHYSICAL REVIEW LETTERS 74 (7): 1127-1130 FEB 13 1995 Times Cited: 117
5. RAMIREZFLORES G, NAVARROCONTRERAS H, LASTRASMARTINEZ A, et al.TEMPERATURE-DEPENDENT OPTICAL BAND-GAP OF THE METASTABLE ZINCBLENDE STRUCTURE BETA-GAN PHYSICAL REVIEW B 50 (12): 8433-8438 SEP 15 1994 Times Cited: 116
6. LIN ME, XUE G, ZHOU GL, et al.P-TYPE ZINCBLENDE GAN ON GAAS SUBSTRATES APPLIED PHYSICS LETTERS 63 (7): 932-933 AUG 16 1993 Times Cited: 107
7. LUBBEN D, TSU R, BRAMBLETT TR, et al.MECHANISMS AND KINETICS OF SI ATOMIC-LAYER EPITAXY ON SI(001)2X1 FROM SI2 H6 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 9 (6): 3003-3011 NOV-DEC 1991 Times Cited: 105